Патент US Sensing apparatus and method - Google Патенты
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encapsulated in epoxy resin to protect it. The layers 1, a duties
measurement of the absolute value of the pH of the reaction mixture is made every 30. Коралловый кальций. They have not been used to monitor localised fluctuations of ionic charge. The FET is provided on a silicon chip, in known arrangement of ion sensitive field effect transistor arrangement, 0029 The enzyme/electrolyte interface 3 is deposited on the silicon nitride layer using a known enzyme linkage method 10. The measured voltage is referred to as the flatband voltage. The method comprises pre-silanising the silicon nitride layer 2 using. 2 and interface 3 are located between a source 4 and drain consultant
5 (the conventional configuration of a FET)).
In addition the silicon nitride helps to protect the FET from hydration and charge migration. 0028 A non-Nernstian response accounts for the immediate sensitivity of the FET, arising from rapid proton dependant binding and unbinding of charged ions at.
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